Aravindh Kumar, PhD

About me

I’m a semiconductor device engineer working on developing technology and DTCO boosters for advanced CMOS technology nodes. My expertise spans device engineering, circuit modeling (ring-oscillator, parasitic modeling), power-delivery circuits, process integration, and nanofabrication. My work at Samsung has resulted in over 15 U.S. patent filings, and includes collaborations with imec, SRC, and top U.S. universities. I earned my Ph.D. from Stanford, where I developed record-low resistance contacts and stable doping techniques for 2D materials like MoS₂, enabling energy-efficient, next-generation transistors, resulting in over 20 peer-reviewed publications.

Education

• PhD in Electrical Engineering, Stanford University, 2022 (Defense, Thesis)

  • Advisor: Prof. Krishna Saraswat 

• MS in Electrical Engineering, Stanford University, 2018

• B.Tech. (Honors) in Electrical Engineering, IIT Bombay, 2016

  • Minor degrees in Physics and Computer Science